High-electron-mobility transistor (hemt) semiconductor devices with reduced dynamic resistance

ABSTRACT

High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.

RELATED APPLICATION

This application claims priority to and the benefit of U.S. ProvisionalPatent Application No. 62/423,547, filed Nov. 17, 2016, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

This application relates generally to semiconductor devices and methodsfor making such devices. More specifically, this application describessemiconductor devices including high-electron-mobility transistors(HEMT) with reduced dynamic resistance.

BACKGROUND

Semiconductor devices containing integrated circuits (ICs) or discretedevices are used in a wide variety of electronic devices. The IC devices(or chips, or discrete devices) can include a miniaturized electroniccircuit that has been manufactured in the surface of a substrate ofsemiconductor material. The circuits are composed of many overlappinglayers, including layers containing dopants that can be diffused intothe substrate (called diffusion layers) or ions that are implanted(implant layers) into the substrate. Other layers are conductors(polysilicon or metal layers) or connections between the conductinglayers (via or contact layers). IC devices or discrete devices can befabricated in a layer-by-layer process that uses a combination of manysteps, including imaging, deposition, etching, doping and cleaning.Silicon wafers are typically used as the substrate and photolithographyis used to mark different areas of the substrate to be doped or todeposit and define polysilicon, insulators, or metal layers.

One type of semiconductor device, a high-electron-mobility transistor(HEMT), is a field-effect transistor incorporating a junction betweentwo materials with different band gaps (i.e. a hetero-junction) as thechannel instead of a doped region (as is generally the case for MOSFETdevices). HEMTs can be used in integrated circuits as digital on-offswitches. HEMT transistors can operate at higher frequencies thanordinary transistors and can be used in many high-frequency products,including, for example, mobile phones.

SUMMARY

High-electron-mobility transistor (HEMT) devices are described in thispatent application. In some implementations, the HEMT devices caninclude a back barrier hole injection structure. In someimplementations, the HEMT devices include a conductive striped portionelectrically coupled to a drain contact.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram that illustrates an example implementation of ahigh-electron-mobility transistor (HEMT) device.

FIG. 2 illustrates a variation of the HEMT device shown in FIG. 1.

FIG. 3A is a diagram that illustrates a plan view of the HEMT deviceshown in FIG. 1.

FIG. 3B is a diagram that illustrates a variation of the HEMT deviceshown in FIGS. 1 and 3A.

FIG. 4 is a diagram that illustrates another variation of the HEMTdevice shown in FIG. 1.

FIGS. 5A through 5C illustrates a process for making the HEMT devicesdescribed herein in connection with at least FIGS. 1 through 4.

FIG. 6 is a flowchart that illustrates a method of making the HEMTdevices.

FIGS. 7A through 7D are diagrams that illustrate a HEMT device thatincludes conductive striped portions coupled to a drain contact.

FIGS. 8A through 8C are diagrams that illustrate a variation of the HEMTdevice shown in FIGS. 7A through 7D.

FIGS. 9A through 9D are diagrams that illustrate a variation of the HEMTdevice shown in FIGS. 8A through 8C.

FIGS. 10 through 12 are diagrams that illustrate plan views ofvariations of a HEMT device.

FIG. 13A through 13C are diagrams that illustrates a variation of theHEMT device shown in at least FIG. 8A.

FIGS. 14A and 14B are diagrams that illustrate variations of the HEMTdevice shown in FIGS. 13A through 13C.

FIG. 15 illustrates a diode variation of a HEMT device.

FIGS. 16A through 16C are diagrams that illustrate variations of theHEMT device shown in FIGS. 7A through 7D.

FIGS. 16D through 16F illustrate variations of a portion of the HEMTdevice shown in FIGS. 16A through 16C that includes metal layer portionsdisposed on conductive striped portions.

FIG. 17 through 21B are graphs that illustrate performance of HEMTdevices according to implementations described herein.

The Figures illustrate specific aspects of the semiconductor devices andmethods for making such devices. Together with the followingdescription, the Figures demonstrate and explain the principles of themethods and structures produced through these methods. In the drawings,the thickness of layers and regions are exaggerated for clarity. It willalso be understood that when a layer, component, or substrate isreferred to as being “on” another layer, component, or substrate, it canbe directly on the other layer, component, or substrate, or interveninglayers may also be present. The same reference numerals in differentdrawings represent the same element, and thus their descriptions willnot be repeated.

DETAILED DESCRIPTION

To help reduce the on resistant between a source and a drain (RDS_(on))of a high-electron-mobility transistor (HEMT) device (e.g., a galliumnitride (GaN) HEMT device), the HEMT device can be configured withstructures that trigger hole injection (e.g., direct back barrier holeinjection) into a channel region (e.g., a 2-dimensional electron gas(2DEG)) of the HEMT device. The RDS_(on) in the channel region canincrease, in an undesirable fashion, for example, when the HEMT deviceis turned on after a relatively high voltage has been applied to thedrain of the HEMT device in the off state of the HEMT device. Electronstrapped near, or within, the channel region can neutralize the carriercharges in the channel region resulting in an increased RDS_(on). Theincrease in RDS_(on) due to this mechanism can be referred to as currentcollapse, and can be particularly problematic when the HEMT device isturned on (e.g., is in the on state). In some implementations, RDS_(on)can be increased in an undesirable fashion, in particular, whereelectric fields within the HEMT device are relatively high.

In some implementations, to reduce RDS_(on), for example, in response tothe undesirable mechanisms described above, hole injection can betriggered by various semiconductor structures below, near, or coupled toa drain and/or source of the HEMT device. In other words, variousstructures below, near, or coupled to a drain and/or source of the HEMTdevice can be used to reduce RDS_(on), for example, in response to theundesirable mechanisms described above. In some implementations,RDS_(on) can be reduced, for example, using direct back barrier holeinjection. In some implementations, holes can be injected by using anapplied voltage to the drain and/or source of the HEMT device. Thestructures and methods described herein can result in the generation ofcarriers and reduce RDS_(on) by conductivity modulation. In someimplementations, striped conductive structures can be implemented inHEMT devices for conductivity modulation. In some implementations, afield plate can be used to spread the electric field and reduce theRDS_(on).

Throughout this detailed description enhancement mode devices (e.g.,E-HEMT devices, normally-on devices) or depletion mode devices (e.g.,D-HEMT devices, normally-off) are illustrated in the variousembodiments. In some implementations, the depletion mode devices can bemodified to be enhancement mode devices. In some implementations, theenhancement mode devices can be modified to be depletion mode devices.

FIG. 1 is a diagram that illustrates an example implementation of ahigh-electron-mobility transistor (HEMT) device 100. The HEMT device 100includes a channel layer 104 vertically disposed between a carriergeneration layer 103 and a buffer layer 105. The HEMT device 100 alsoincludes a gate contact G laterally disposed between a source contact Sand a drain contact D. The source contact S and the drain contact D arein contact with the carrier generation layer 103. The gate contact G iscoupled to a dielectric layer 102 that is disposed on the carriergeneration layer 103. The dielectric layer 102 is disposed between thedrain contact D and the source contact S.

A two-dimensional electron gas (2DEG) (illustrated with a dashedhorizontal line; also can be referred to as a channel) along a channelregion is generated at or near the interface between the carriergeneration layer 103 in the channel layer 104. In some implementations,the 2DEG gas layer can be, or can include carriers. The 2DEG can begenerated based on the different in bandgap voltages between the carriergeneration layer 103 and the channel layer 104. The carrier generationlayer 103 can also be referred to as a high bandgap layer because thebandgap of the material of the carrier generation layer 103 can begreater than a bandgap of the channel layer 104.

As shown in FIG. 1, the HEMT device 100 includes a conductive material110D coupled to (e.g., conductively coupled to, directly coupled to) thedrain contact D. The conductive material 110D is configured to modulateconductivity associated with the 2DEG of the HEMT device 100.Specifically, the conductive material 110D is configured to trigger holegeneration at or near an interface between the channel layer 104 and theback barrier layer 105. This can be referred to a back barrier holeinjection (e.g., direct back barrier hole injection). The holes can beinjected into or near the 2DEG, resulting in reduced RDS_(on) of the2DEG. The holes are illustrated with “+” signs, and the direction ofinjection is illustrated by arrows. Electrons that can be trapped near,or within, the 2DEG, and holes injected into the 2DEG can neutralize theelectron charges resulting in a more favorable RDS_(on). In someimplementations, the lifetime of the HEMT device 100 can be increased bypreventing or reducing dynamic RDS_(on) increase.

Using direct back barrier hole injection can help compensate theincrease of dynamic RDS_(on) (also can be referred to as D-R_(on) or asD-RDS_(on)). By injecting holes using the applied voltage to the draincontact D, the injected holes can generate more carriers and reducedynamic RDS_(on) by conductivity modulation. This can address thedynamic RDS_(on) shifting in a HEMT device after applying a high voltageafter, for example, long term reliability test (such as high temperaturereverse bias (HTRB)). Dynamic on-resistance increase percentage versusVDS voltage is shown in FIG. 17.

As shown in FIG. 1, the conductive material 110D has at least a portiondisposed within the carrier generation layer 103. The conductivematerial 110D also has at least a portion disposed within the channellayer 104. The conductive material 110D is disposed within a trench(e.g., a vertical trench, a recess) within the carrier generation layer103 and the channel layer 104. Because the conductive material 110D isdisposed within a trench, the conductive material can be referred to astrench conductive material. In this implementation, the conductivematerial 110D directly contacts (e.g., is not insulated from) the backbarrier layer 105. The conductive material 110D is not insulated fromthe carrier generation layer 103 and/or the channel layer 104.

The HEMT device 100 is configured so that the hole generation istriggered when the HEMT device 100 is in an off-state. The HEMT device100 shown in FIG. 1 is a depletion mode (DHEMT) device. Accordingly, theHEMT device 100 is a normally-on device and is turned off by applying avoltage lower than a threshold voltage of the HEMT device 100 (e.g.,negative voltage in some implementations) to the gate contact G. When inthe off-state a voltage can be applied to the drain contact D (e.g., adrain voltage) that is higher than a voltage applied to the gate contactG (also can be referred to as a gate voltage) or the source contact S(also can be referred to as a source voltage). Accordingly, both VDG(voltage from drain to gate) and VDS (voltage from drain to source) canbe positive. The voltage applied to the drain contact D can cause holesto be generated at the interface between the conductive material 110Dand the back barrier layer 105. In some implementations, the holegeneration within the HEMT device 100 can be greater with highervoltages (e.g., higher voltages at the drain contact D) and highertemperatures.

The voltage gradient (e.g., potential gradient) between the draincontact D (and the conductive material 110D) and the gate contact G cancause the holes to accelerate in the direction shown (e.g., toward thegate). For example, a voltage at the drain contact D (and conductivematerial 110D) can be approximately 400V and the voltage at gate can be,for example, −10 V. Accordingly, the holes will be accelerated from thelocation of high potential (e.g., drain contact D and conductivematerial 110D) toward the location of low potential (e.g., gate contactG).

The HEMT device 100 is in an on-state when a positive voltage is appliedbetween the drain and the source (e.g., VDS). The HEMT device 100 is anormally-on device so it in an on-state when higher than a thresholdvoltage (e.g., 0V, 1V, 5V etc.) is applied to the gate contact G. Insome implementations, a voltage applied to the gate contact G can changethe depth of the depletion region under the dielectric below the gatecontact G so that drain current can be controlled.

The HEMT device 100 described herein can have a relatively narrow trenchat the drain contact D ohmic contact area. As holes can be injected tothe channel region when the drain contact D potential is high, the holeswill add more 2DEG density and lower dynamic RDS_(on). The lower dynamicRDS_(on) can be due to the hole injection near the drain contact D area.These configurations can also extend the lifetime of the HEMT device 100by preventing RDS_(on) increase. The trench in the drain contact D areacan be narrow enough so that the trench does not degrade the draincontact D resistance. The HEMT device 100 in these embodiments can havea straight line or an array of small contacts.

In some implementations, the conductive material 110D can terminatewithin the channel layer 104 and can terminate above (e.g., verticallyabove) the back barrier layer 105. In some implementations, a relativelyhigh temperature anneal (e.g., a greater than 600° C. anneal, a 850° C.anneal) can be used to drive a bottom portion of the conductive material110D toward, or into, the back barrier layer 105.

In some implementations, the conductive material 110D can terminate atan interface between the back barrier layer 105 and the channel layer104. In some implementations, the conductive material 110D can terminatewithin the back barrier layer 105 and below (e.g., vertically below) thechannel layer 104.

In some implementations, the substrate 106 can include a siliconsubstrate, a silicon carbide (SiC) substrate, and so forth. In someimplementations, the back barrier layer 105 can be, or can include, adoped portion of the substrate. In some implementations, the backbarrier layer 105 can be, or can include an epitaxial layer. In someimplementations, the back barrier layer, as an epitaxial layer, underthe 2DEG can prevent electron flow to substrate 106.

In some implementations, the source contact S and/or the drain contact Dcan be an Ohmic contact. In this implementation, the source contact Sand the drain contact D are disposed on the carrier generation layer103. In some implementations, the source contact S and/or the draincontact D may be recessed in (e.g., can be disposed within) the carriergeneration layer 103.

In this implementation, the gate contact G is disposed in a recesswithin the dielectric layer 102. In some implementations, the gatecontact G may not be recessed within the dielectric layer 102.

As mentioned above, the carrier generation layer 103 can have a bandgapgreater than a bandgap of the channel layer 104. For example, thechannel layer 104 can include, or can be, an undoped or doped GaNmaterial. In some implementations, the AlGaN material can includealuminum content between approximately 1-8%. The carrier generationlayer 103 can include, or can be, an undoped or doped AlGaN material(e.g., with aluminum content between approximately 10-30%). Accordingly,the HEMT device 100 can be a AlGaN/GaN heterostructure.

As shown in FIG. 1, the width W1 of the conductive material 110D is lessthan a width W2 of the drain contact D. The width W1 of the conductivematerial 110D and the width W2 of the drain contact D can be defined sothat the resistance of the Ohmic contact of the drain contact D is notadversely affected. In some implementations, the drain contact D and thetrench in which the conductive material 110D is disposed are alignedalong the same direction (into the page). A plan view that illustratesthis alignment is shown in at least FIG. 3A.

FIG. 2 illustrates a variation of the HEMT device 100 shown in FIG. 1.In FIG. 1, the source contact S is coupled to a conductive material1105. The conductive material 1105 is similar to the conductive material110D coupled to the drain contact D, and can have any of the attributesdescribed in connection with the conductive material 110D. Theconductive material 1105, like the conductive material 110D can, injectholes (shown as “+” with arrows) into the 2DEG when a voltage of thesource contact S is higher than a voltage of the gate voltage G. Theconductive material 1105, like the conductive material 110D can,terminate in the channel layer 104, at an interface between the channellayer 104 and the back barrier layer 105, or in the back barrier layer105. The implementations shown in FIG. 2 can be referred to as a cascodeconfiguration.

The conductive material 1105 can be different than the conductivematerial 110D. For example, a trench associated with the conductivematerial 1105 can have a different profile (e.g., depth, width) than atrench associated with the conductive material 110D. A voltage gradientbetween the source contact S and gate contact G can be less than avoltage gradient between the drain contact D and the gate contact G.

FIG. 3A is a diagram that illustrates a plan view (e.g., a top view) ofthe HEMT device 100 shown in FIG. 1 (view along direction T1 shown inFIG. 1). As shown in FIG. 1, the conductive material 110D is alignedalong the same direction that the drain contact D is aligned.Specifically, the conductive material 110D is disposed within a trenchthat is aligned along the same direction that the drain contact D isaligned.

FIG. 3B is a diagram that illustrates a variation of the HEMT device 100shown in FIGS. 1 and 3A. As shown in FIG. 3B, the conductive material110D includes conductive material portions 110D-1 through 110D-7 (alsocan be referred to as an array of contacts or as islands) that arealigned along the same direction that the drain contact D is aligned.Each of the conductive material portions 110D-1 through 110D-7 isdisposed in a separate trench. Accordingly, mesas (e.g., mesa portions)are disposed between the conductive material portions 110D-1 through110D-7. Although not shown in FIGS. 3A and 3B, the features described inconnection with FIGS. 3A and 3B can be implemented with the sourcecontact S.

FIG. 4 is a diagram that illustrates another variation of the HEMTdevice 100 shown in FIG. 1. In this implementation, conductive material110D includes at least one spike. The spikes illustrates in FIG. 4 donot contact directly the back barrier layer 105. In someimplementations, a relatively high temperature anneal (e.g., a greaterthan 600° C. anneal, a 850° C. anneal) can be used to produce or enhancethe conductive material 110D from the drain contact D toward the backbarrier layer 105. In some implementations, the anneal can be arelatively long anneal (e.g., 10-30 s at 850° C.). The featuresdescribed in connection with FIG. 4 can be implemented with the sourcecontact S.

FIGS. 5A through 5C illustrates a process for making the HEMT devices100 described herein in connection with at least FIGS. 1 through 4. Manyof the process steps described in connection with FIGS. 5A through 5Ccan be applied to the embodiments described below as well.

As shown in FIG. 5A, the back barrier layer 105 can be disposed on thesubstrate 106. If the back barrier layer 105 is an epitaxial layer, theback barrier layer 105 can be grown on the substrate 106. The channellayer 104 can be formed on the back barrier layer 105. The carriergeneration layer 103 can be formed on the channel layer 104.

As shown in FIG. 5B, a trench 109 (also can be referred to as anopening) is formed in the carrier generation layer 103 and in thechannel layer 104. In this implementation, the trench 109 terminates atan interface between the channel layer 104 and the back barrier layer105. In some implementations, the trench 109 can terminate in thechannel layer 104 or in the back barrier layer 105. The trench 109 canbe formed using, for example, a masking and etch process.

As shown in FIG. 5C, the conductive material 110D is disposed in thetrench 109. If the trench 109 terminates within the channel layer 104,an anneal process can be performed so that the conductive material 110Dcan be driven to a deeper depth within the channel layer 104 or into theback barrier layer 105. In some implementations, a width of the trench109 is less than a depth (e.g., vertical depth) of the trench 109.

The drain contact D is disposed on the conductive material 110D and thecarrier generation layer 103. The source contact S is also disposed onthe carrier generation layer 103. The source contact S and the draincontact D can be formed using the same process. The dielectric layer 102is disposed on the carrier generation layer 103, and the gate contact Gis disposed on the dielectric layer 102 (e.g., disposed in an etchedrecess portion within the dielectric layer 102).

The process described in connection with FIGS. 5A through 5C can beimplemented with the source contact S. In some implementations, the gatedielectric layer 102 (also can be referred to as a gate dielectriclayer) can be excluded. In some implementations, a doped material (e.g.,pGaN) can be formed below (e.g., before) the gate contact G.

FIG. 6 is a flowchart that illustrates a method of making the HEMTdevices 100. The method shown in FIG. 6 includes forming a back barrierlayer on a substrate (block 610), and forming a channel layer on theback barrier layer (block 620). A carrier generation layer is formed onthe channel layer (block 630). A trench defined within the carriergeneration layer and the channel layer (block 640). In someimplementations, the trench can terminate in the channel layer or in theback barrier layer. The trench can be formed using, for example, amasking and etch process. The mask for the trench can have a width thatis narrower than an Ohmic contact width of the drain contactD . Aconductive material is disposed in the trench (block 650), and a draincontact is formed on the conductive material (block 660). In someimplementations, if the trench terminates within the channel layer, ananneal process can be performed so that the conductive material can bedriven to a deeper depth within the channel layer or into the backbarrier layer.

In some implementations, a source contact and the drain contact can beformed using the same process. A dielectric layer can be disposed on thecarrier generation layer, and a gate contact can be disposed on thedielectric layer. The method described in connection with FIG. 6 can beimplemented with a source contact. In some implementations, the gatedielectric layer can be excluded. In some implementations, a dopedmaterial (e.g., pGaN) can be formed below (e.g., before) the gatecontact.

FIGS. 7A through 7D are diagrams that illustrate a HEMT device 200 thatincludes conductive striped portions 210D coupled to (e.g., electricallycoupled to) a drain contact D. FIG. 7A is a plan view (e.g., a topview), FIG. 7B is a side cross-sectional view along line A1 FIG. 7A, andFIG. 7C is a side cross-sectional view along line A2. The HEMT device200 shown in FIGS. 7A through 7C is an EHEMT device or normally offdevice. The elements that are the same as those described above have thesame labels. Elements such as a back barrier layer and substrate are notshown to simplify the drawings.

The conductive striped portions 210D include conductive striped portions210D-1 through 210D-4. The conductive striped portions 210D are stripedportions. In other words, the HEMT device 200 includes a stripepatterned conductive striped portions 210D at the drain contact D area.The conductive materials portions 210D are aligned parallel to oneanother. For example, conductive striped portion 210D-1 is alignedparallel to conductive striped portion 210D-2.

In this implementation, the RDS_(on) can be reduced by using theconductive striped portions 210D in the drain contact D of HEMT device200. By injecting holes from the conductive striped portions 210D at theedge of the drain contact D of HEMT device 200, electrons can begenerated. This configuration can compensate for the increase of D-Ronat high voltage. As the conductive striped portions 210D inject holeswhen the drain contact D potential is high, more 2DEG density can beadded and the dynamic RDS_(on) can be reduced. Lower dynamic RDS_(on)can be attributed to the hole injection near (e.g., below) theconductive striped portions 210D and the drain contact D area. Thisconfiguration can also extend the lifetime of the HEMT device 200 bypreventing or reducing dynamic RDS_(on) increase. The conductive stripedportions 210D can be in a striped pattern so that they do not increasethe total RDS_(on).

The dynamic on-resistance (D-Ron) increase percentage versus VDS voltagefor a striped HEMT device is illustrated in FIG. 18A and can be comparedwith dynamic on-resistance (D-Ron) increase percentage versus VDSvoltage for a normal E-HEMT device shown in FIG. 18B. FIG. 19Aillustrates initial dynamic on-resistance for a typical HEMT device(shown with squares) and a striped HEMT device (shown with diamonds).FIG. 19B illustrates increased separation in dynamic on-resistance forthe typical HEMT device and the striped HEMT device after stress testing(e.g., high temperature reverse bias (HTRB) test at, for example, morethan 1000 hrs.). FIG. 19C illustrates dynamic on-resistance percentagedifference (different from FIG. 19A to FIG. 19B) for the typical HEMTdevice and the striped HEMT device after stress testing. FIG. 20Aillustrates dynamic on-resistance increase percentage for a typical HEMTdevice (shown with squares) and a striped HEMT device (shown withdiamonds) at 25° C. FIG. 20B illustrates dynamic on-resistance increasepercentage for the typical HEMT device and the striped HEMT device at150° C. and after stress testing. FIG. 21A illustrates on-resistancepercentage shift for a typical HEMT device (shown with squares) and astriped HEMT device (shown with X's) at 25° C. and after stress testing.FIG. 21B illustrates on-resistance percentage shift for the typical HEMTdevice and the striped HEMT device at 150° C. and after stress testing.These figures illustrate that the striped HEMT devices have lowerdynamic RDS_(on) at high voltage. These configurations can also exhibitlower shift and/or lower dynamic RDS_(on) after stress testing, whichcan extend the lifetime of the HEMT devices.

In this implementation, the conductive striped portions 210D are ondisposed on a surface of the carrier generation layer 103. Accordingly,the conductive striped portions 210D are not recessed in the carriergeneration layer 103. In some implementations, the conductive stripedportions 210D can be recessed at least some amount within the carriergeneration layer 103 (and/or the channel layer 104).

The conductive striped portions 210D each have a least a portiondisposed under the drain contact D. For example, as shown in FIG. 7B,the conductive striped portion 210D-3 has a portion 211 that is disposedoutside of the drain contact D (is disposed outside of a verticalprojection of the drain contact D). The conductive striped portion210D-3 has a portion 212 disposed below at least a portion (or within aportion) of the drain contact D. In other words, the portion 212 of theconductive striped portion 210D-3 is disposed between a portion of thedrain contact D and a top surface of carrier generation layer 103.

As shown in FIG. 7B, a spacer 230 is disposed between gate contact andthe carrier generation layer 103. The spacer 230 can be made of thematerial that is the same as the material one or more of the conductivestriped portions 210D. In some implementations, the spacer 230 and/orthe conductive striped portions 210D can be made of a doped material. Insome implementations, the spacer 230 and/or the conductive stripedportions 210D can be made of a doped gallium nitride material (e.g.,p-type doped GaN (pGaN)).

In some implementations, a thickness U1 of the spacer 230 can be thesame as a thickness U2 of one or more of the conductive striped portions210D. In some implementations, the thickness U1 of the spacer 230 can bedifferent than (e.g., greater than, less than) the thickness U2 of oneor more of the conductive portions 210D. In some implementations, thethickness U2 of one or more of the conductive striped portions 210D canalso be thinner than the thickness U1 of the spacer 230 to furtherminimize dynamic RDS_(on) increase.

As shown in FIG. 7A, in some implementations, a length U3 of one or moreof the conductive striped portions 210D can be greater than a width W2of the drain contact D. The length U3 of one or more of the conductivestriped portions 210D can be defined to minimize or reduce currentcollapse within predefined voltage ranges (e.g., reduce current collapseat a switching voltage of ˜400V for a 650V HEMT device).

In some implementations, a spacing (e.g., spacing U4 between conductivestriped portions 210D-2, 210D-3) between the stripes of the conductivestriped portions 210D can be defined so that overall dynamic RDS_(on)increase of the HEMT device 200 can be decreased or minimized. In someimplementations, the spacing U4 (e.g., 10 microns) can be less than(e.g., 2 times less, 5 times less, 10 times less) the length U3 (e.g.,1-2 microns).

In some implementations, a width (e.g., width U5 of conductive stripedportion 210D-1) of the stripes of the conductive striped portions 210Dcan be defined so that overall dynamic RDS_(on) increase of the HEMTdevice 200 can be decreased or minimized. A distance between ends of theconductive striped portions 210D and the gate contact G (e.g., distanceU6) can be defined so that operation of the HEMT device 200 is notadversely affected. The conductive striped portions 210D of the HEMTdevice 200 can have a width, length, and spacing that can be varieddepending on the end use of the HEMT device 200 and the typical cut-offvoltage.

FIG. 7C illustrates that in spaces between the conductive stripedportions 210D (e.g., along cut line A2), holes are not generated.Accordingly, the 2DEG layer below the drain contact D area (illustratedwith a dashed line) is not disrupted.

In some implementations, the conductive striped portions 210D (or aportion thererof) can be separated (e.g., separated by a gap) from thedrain contact D. Accordingly, in such implementations a portion of theconductive striped portions 210D may not be disposed (e.g., portion 212of the conductive striped portion 210D-3 may not be disposed) below thedrain contact D. In such implementations, the drain contact D can beconductive coupled to (e.g., coupled to each of) the conductive stripedportions 210D via, for example, a metal layer(s), a via, and/or soforth.

FIG. 7D is a diagram that illustrates multiple cells of a variation ofthe HEMT device 200. As shown in FIG. 7D, conductive striped portions210D extend out from both sides of the drain contact D. Portions of theconductive striped portions 210D extending from a first side of thedrain contact D are associated with a first cell (e.g., left side) ofthe HEMT device 200 and portions of the conductive striped portions 210Dextending from a second side (e.g., right side) of the drain contact Dare associated with a second cell of the HEMT device 200.

FIGS. 8A through 8C are diagrams that illustrate a variation of the HEMTdevice 200 shown in FIGS. 7A through 7D. Elements that were describedabove (and variations thereof) are not described again in connectionwith FIGS. 8A through 8C.

In this implementation, conductive transverse portions 220D are disposedbetween the conductive striped portions 210D and the gate contact G. Theconductive transverse portions 220D reduce electric fields that may begenerated at the ends of the conductive striped portions 210D (e.g.,ends distal to the drain contact D, ends facing toward the gate contactG).

As shown in FIG. 8A, each of the conductive transverse portions 220D arealigned a long a line (e.g., substantially aligned a line) that isnon-parallel to (e.g., orthogonal to) each of the conductive stripedportions 210D. In some implementations, at least a first portion of theconductive transverse portions 220D can be aligned a long a first lineand at least a second portion of the conductive transverse portions 220Dcan be aligned a long a second line. In some implementations, the firstline and the second line can be parallel or non-parallel. In someimplementations, the first line and the second line can be non-parallelto (e.g., orthogonal to) each of the conductive striped portions 210D.

The drain contact D (or the conductive striped portions 210) can beconductive coupled to the conductive transverse portions 220D (e.g., viaa metal layer(s), a via, etc.). Such conductive coupling betweenconductive transverse portions 220D and the drain contact D isillustrated in FIG. 8B. In some implementations, one or more of theconductive transverse portions 220D are made of the same material as oneor more of the conductive striped portions 210D.

In some implementations, one or more of the conductive transverseportions 220D can be coupled to (e.g., electrically coupled to) one ormore of the conductive striped portions 210D. As shown in FIG. 8B athickness of the conductive transverse portions 220D can be the same as(or different from) the thickness of the conductive striped portions210D. The conductive striped portions 210D can be formed using the sameprocess as the conductive transverse portions 220D.

In some implementations the ratio of a number of the conductivetransverse portions 220D can be equal to a number of the conductivestriped portions 210D. In other words, a conductive transverse portion220D can correspond with each conductive striped portion 210D. In someimplementations the ratio of a number of the conductive transverseportions 220D can be different from (e.g., greater than, less than) anumber of the conductive striped portions 210D.

FIGS. 9A through 9D are diagrams that illustrate a variation of the HEMTdevice 200 shown in FIGS. 8A through 8C. Elements that were describedabove (and variations thereof) are not described again in connectionwith FIGS. 9A through 9D. In this implementation, additional conductivestriped portions 210D are included in the set of conductive stripedportions. Accordingly, a number of the conductive striped portions 210Dis greater than (e.g., 2 times greater than) a number of the conductivetransvers portions 220D.

FIG. 10 is a diagram that illustrates a plan view yet another variation(which can include any of the variations above) of the HEMT device 200.In this implementation, the conductive striped portions 210D are alignedin the spaces between the conductive transverse portions 220D. Forexample, conductive striped portion 210D-2 is aligned along a line A4that intersects a space or opening between the conductive transverseportion 220D-1 and the conductive transverse portion 220D-2.

FIG. 11 is a diagram that illustrates a plan view a variation (which caninclude any of the variations above) of the HEMT device 200 shown inFIG. 10. The conductive striped portions 210D are aligned in the spacesbetween the conductive transverse portions 220D. The conductivetransverse portions 220D also each have a curved shape. In thisimplementation, concave portions of the curved shapes are facing towardthe drain contact D. In some implementations, one or more of theconductive transverse portions 220D can have a non-curved shape. In someimplementations, one or more of the conductive transverse portions 220Dcan be aligned with one or more of the conductive striped portions 210D(e.g., as shown in FIG. 8A).

FIG. 12 is a variation of the HEMT device 200 of FIG. 10. In thisimplementation, the conductive striped portions 210D are separated(e.g., separated by a gap) from the drain contact D. In someimplementations, one or more of the conductive transverse portions 220Dcan have a curved shape.

FIG. 13A through 13C are diagrams that illustrates a variation of theHEMT device 200 shown in at least FIG. 8A. The features of thevariations of any of FIGS. 7A-7D and 9A-12 can be combined with FIGS.13A through 13C. In this implementation, a field plate 250 is coupled tothe tops of the conductive transverse portions 220D. The field plate 250can be made of the same metal as the gate contact G. As shown in FIGS.13B and 13C, the field plate 250 can be coupled to the drain contact Dvia a metal layer 252 (e.g., a metal M1 layer). The metal layer 252 isnot shown in FIG. 13A. The field plate 250 can be configured to reduce(e.g., redistribute) the electric field associated with the conductivestriped portions 210D and/or the conductive transverse portions 220D.

FIGS. 14A and 14B are diagrams that illustrate variations of the HEMTdevice 200 shown in FIGS. 13A through 13C. This implementation includesa field plate 250 that has recesses 252 that can be configured tore-direct portions of an electric field associated with the conductivestriped portions 210D and/or the conductive transverse portions 220D. Inthis implementation, the recesses 252 are disposed between theconductive transverse portions 220D. The recesses 252 have a trapezoidalshape. Other shapes such as semi-circles, rectangles, etc. can also beimplemented. The directions of the electric field are illustrated in thezoomed in portion shown in FIG. 14B associated with conductivetransverse portion 220D-1 and conductive striped portion 210D-2. Thistype of field plate structure can be combined with any of theembodiments described above.

FIG. 15 illustrates a diode variation of the HEMT device 200. The sourcecontact S is coupled to the gate contact G to define a source cathode280. Any type of anode structure can be used in connection with thesource cathode 280, such as a Schottky contact, a junction barrier diodedevice, a device including pGaN, and/or so forth. This implementationwith the source cathode 280 can be combined with any of the structuresdescribed above.

FIGS. 16A through 16C are diagrams that illustrate variations of theHEMT device 200 shown in FIGS. 7A through 7D. Elements that weredescribed above (and variations thereof) are not described again inconnection with FIGS. 16A through 16C. In this implementation, theconductive striped portions 210D are entirely disposed below the draincontact D. In other words, the conductive striped portions 210D have alength U3 that is less than or equal to a width W2 of the drain contactD. FIG. 16B illustrates the conductive striped portion 210D-3 cut alongA1, and FIG. 16C illustrates the conductive striped portions 210D-3 and210D-4 cut along A4. Ohmic contacts (between the drain contacts D andcarrier generation layer 103) are disposed between the conductivestriped portions 210D.

Although not shown, in some implementations, each of the conductivestriped portions 210D can have multiple segments (also can be referredto as sections). For example, the conductive striped portion 210D-3 canhave multiple separate segments along line A1. The conductive stripedportions 210D-3 can each have a length less than half of the width W2 ofthe drain contact D.

FIG. 16D illustrates a variation (cut along line A4) of a portion of theHEMT device 200 shown in FIGS. 16A through 16C that includes metal layerportions 256 disposed on the conductive striped portions 210D. The metallayer portions 256 can be made of the same material as the field plate250 described in other embodiments. Ohmic or Schottky contacts aredefined between the metal layer portions 256 and the conductive stripedportions 210D.

FIG. 16E illustrates a variation (cut along line A4) of a portion of theHEMT device 200 shown in FIGS. 16A through 16D that includes metal layerportions 256 disposed on the conductive striped portions 210D. In thisimplementation, conductive striped portions 210D are disposed on mesasof the carrier generation layer 103. Recesses are formed in the carriergeneration layer 103 between the conductive striped portions 210D.

FIG. 16F illustrates yet another variation (cut along line A4) of aportion of the HEMT device 200 shown in FIGS. 16A through 16E thatincludes metal layer portions 256 disposed on the conductive stripedportions 210D. In this implementation, portions of the dielectric layers215 can be disposed on at least sidewall portions and/or top surfaces ofthe conductive striped portions 210D. The dielectric layers 215 can havea least a portion disposed at least on a portion of the mesas and/or topsurfaces of the carrier generation layer 103. Even with the dielectriclayers 215, Ohmic or Schottky contacts are defined between the metallayer portions 256 and the conductive striped portions 210D.

In one general aspect, a semiconductor device includes a channel layer,a carrier generation layer disposed on the channel layer, and a sourcecontact disposed on the carrier generation layer. The semiconductordevice includes a drain contact disposed on the carrier generationlayer, a gate contact disposed between the source contact and the draincontact, and a trench conductive material in contact with the draincontact and having at least a portion disposed in the carrier generationlayer and in the channel layer.

In some implementations, the trench conductive material is in contactwith the carrier generation layer and extends between the drain contactand the channel layer. In some implementations, the trench conductivematerial terminates within the channel layer. In some implementations,the semiconductor device can include a back barrier layer disposed belowthe channel layer. The trench conductive material can extend between thedrain contact and the back barrier layer, and the trench conductivematerial can terminate in the back barrier layer.

In some implementations, the semiconductor device can include a backbarrier layer disposed below the channel layer. The trench conductivematerial can extend from the drain contact and terminating above theback barrier layer. In some implementations, the semiconductor device isa high-electron-mobility transistor (HEMT) device configured to define a2-dimensional electron gas layer. The carrier generation layer caninclude an aluminum gallium nitride (AlGaN) material, and the channellayer can include a gallium nitride (GaN) material.

In some implementations, the drain contact can define an ohmic contactwith the carrier generation layer, and the source contact can define anohmic contact with the carrier generation layer. The semiconductordevice can include a dielectric layer disposed on the carrier generationlayer, and the gate contact can be recessed within the dielectric layer.

In some implementations, the trench conductive material has a width lessthan a width of the drain contact. In some implementations, thesemiconductor device is a depletion mode device or an enhancement modedevice. In some implementations, the at least the portion of the trenchconductive material is disposed within a trench disposed in the carriergeneration layer and in the channel layer, and the trench is alignedalong a same direction that the drain contact is aligned.

The semiconductor device of claim 1, wherein the trench conductivematerial is a first trench conductive material. The semiconductor devicecan include a second trench conductive material in contact with thesource contact and having at least a portion disposed in the carriergeneration layer and in the channel layer.

In some implementations, the trench conductive material is a firsttrench conductive material disposed in a first trench. The semiconductordevice can include a second trench conductive material in contact withthe drain contact and can have at least a portion disposed in thecarrier generation layer and in the channel layer. The at least theportion of the second trench conductive material can be disposed in asecond trench separate from the first trench such that a mesa isdisposed between the first trench and the second trench.

In another general aspect, a semiconductor device can include a channellayer, a carrier generation layer disposed on the channel layer, and asource contact disposed on the carrier generation layer. Thesemiconductor device can include a drain contact disposed on the carriergeneration layer, a gate contact disposed between the source contact andthe drain contact, and a plurality of conductive striped portionselectrically coupled with the drain contact.

In some implementations, the semiconductor device a spacer disposedbetween the gate contact and the carrier generation layer. In someimplementations, the semiconductor device can include a spacer disposedbetween the gate contact and the carrier generation layer and can have athickness the same as a thickness of the plurality conductive stripedportions. In some implementations, the semiconductor device a spacerdisposed between the gate contact and the carrier generation layer. Thespacer and the plurality of conductive striped portions can be made ofthe same material and during the same manufacturing process.

In some implementations, the plurality of conductive striped portionscan be made of a pGaN material. In some implementations, a conductivestriped portion from the plurality of conductive striped portions isseparated from the drain contact and is in direct electrical connectionthrough a metal layer.

In another general aspect, a semiconductor device can include a channellayer, a carrier generation layer disposed on the channel layer, and asource contact disposed on the carrier generation layer. Thesemiconductor device can include a drain contact disposed on the carriergeneration layer, a gate contact disposed between the source contact andthe drain contact, and a conductive striped portion electrically coupledwith the drain contact. The semiconductor device can include aconductive transverse portion disposed between the conductive stripedportion and the gate contact. The conductive transverse portion can bealigned non-parallel to the conductive striped portion. In someimplementations, the semiconductor device can include a field platecoupled to the conductive transverse portion.

The following description supplies specific details in order to providea thorough understanding. Nevertheless, the skilled artisan wouldunderstand that the semiconductor devices and associated methods ofmaking and using the devices can be implemented and used withoutemploying these specific details. Indeed, the semiconductor devices andassociated methods can be placed into practice by modifying theillustrated devices and methods and can be used in conjunction with anyother apparatus and techniques conventionally used in the industry. Forexample, while description refers to HEMT devices, it could be modifiedfor other types of semiconductor devices. As well, although the devicesare described with reference to a particular type of conductivity (P orN), the devices can be configured with a combination of the same type ofdopant or can be configured with the opposite type of conductivity (N orP, respectively) by appropriate modifications.

It is understood that all material types provided herein are forillustrative purposes only. Accordingly, one or more of the variousdielectric layers in the embodiments described herein may comprise low-kor high-k dielectric materials. As well, while specific dopants arenames for the n-type and p-type dopants, any other known n-type andp-type dopants (or combination of such dopants) can be used in thesemiconductor devices. As well, although the devices of the inventionare described with reference to a particular type of conductivity (P orN), the devices can be configured with a combination of the same type ofdopant or can be configured with the opposite type of conductivity (N orP, respectively) by appropriate modifications.

In addition to any previously indicated modification, numerous othervariations and alternative arrangements may be devised by those skilledin the art without departing from the spirit and scope of thisdescription, and appended claims are intended to cover suchmodifications and arrangements. Thus, while the information has beendescribed above with particularity and detail in connection with what ispresently deemed to be the most practical and preferred aspects, it willbe apparent to those of ordinary skill in the art that numerousmodifications, including, but not limited to, form, function, manner ofoperation and use may be made without departing from the principles andconcepts set forth herein. Also, as used herein, examples are meant tobe illustrative only and should not be construed to be limiting in anymanner.

What is claimed is:
 1. A semiconductor device, comprising: a channellayer; a carrier generation layer disposed on the channel layer; asource contact disposed on the carrier generation layer; a drain contactdisposed on the carrier generation layer; a gate contact disposedbetween the source contact and the drain contact; and a trenchconductive material in contact with the drain contact and having atleast a portion disposed in the carrier generation layer and in thechannel layer.
 2. The semiconductor device of claim 1, wherein thetrench conductive material is in contact with the carrier generationlayer and extends between the drain contact and the channel layer. 3.The semiconductor device of claim 1, wherein the trench conductivematerial terminates within the channel layer.
 4. The semiconductordevice of claim 1, further comprising: a back barrier layer disposedbelow the channel layer, the trench conductive material extendingbetween the drain contact and the back barrier layer, the trenchconductive material terminating in the back barrier layer.
 5. Thesemiconductor device of claim 1, further comprising: a back barrierlayer disposed below the channel layer, the trench conductive materialextending from the drain contact and terminating above the back barrierlayer.
 6. The semiconductor device of claim 1, wherein the semiconductordevice is a high-electron-mobility transistor (HEMT) device configuredto define a 2-dimensional electron gas layer, the carrier generationlayer includes an aluminum gallium nitride (AlGaN) material, the channellayer includes a gallium nitride (GaN) material.
 7. The semiconductordevice of claim 1, wherein the drain contact defines an ohmic contactwith the carrier generation layer, the source contact defines an ohmiccontact with the carrier generation layer, the semiconductor devicefurther comprising: a dielectric layer disposed on the carriergeneration layer, the gate contact being recessed within the dielectriclayer.
 8. The semiconductor device of claim 1, wherein the trenchconductive material has a width less than a width of the drain contact.9. The semiconductor device of claim 1, wherein the semiconductor deviceis a depletion mode device or an enhancement mode device.
 10. Thesemiconductor device of claim 1, wherein the at least the portion of thetrench conductive material is disposed within a trench disposed in thecarrier generation layer and in the channel layer, the trench is alignedalong a same direction that the drain contact is aligned.
 11. Thesemiconductor device of claim 1, wherein the trench conductive materialis a first trench conductive material, the semiconductor device furthercomprising: a second trench conductive material in contact with thesource contact and having at least a portion disposed in the carriergeneration layer and in the channel layer.
 12. The semiconductor ofclaim 1, wherein the trench conductive material is a first trenchconductive material disposed in a first trench, the semiconductor devicefurther comprising: a second trench conductive material in contact withthe drain contact and having at least a portion disposed in the carriergeneration layer and in the channel layer, the at least the portion ofthe second trench conductive material being disposed in a second trenchseparate from the first trench such that a mesa is disposed between thefirst trench and the second trench.
 13. A semiconductor device,comprising: a channel layer; a carrier generation layer disposed on thechannel layer; a source contact disposed on the carrier generationlayer; a drain contact disposed on the carrier generation layer; a gatecontact disposed between the source contact and the drain contact; and aplurality of conductive striped portions electrically coupled with thedrain contact.
 14. The semiconductor device of claim 13, furthercomprising: a spacer disposed between the gate contact and the carriergeneration layer.
 15. The semiconductor device of claim 13, furthercomprising: a spacer disposed between the gate contact and the carriergeneration layer and have a thickness the same as a thickness of theplurality conductive striped portions.
 16. The semiconductor device ofclaim 13, further comprising: a spacer disposed between the gate contactand the carrier generation layer, the spacer and the plurality ofconductive striped portions being made of the same material and duringthe same manufacturing process.
 17. The semiconductor device of claim13, wherein the plurality of conductive striped portions are made of apGaN material.
 18. The semiconductor device of claim 13, wherein aconductive striped portion from the plurality of conductive stripedportions is separated from the drain contact and is in direct electricalconnection through a metal layer.
 19. A semiconductor device,comprising: a channel layer; a carrier generation layer disposed on thechannel layer; a source contact disposed on the carrier generationlayer; a drain contact disposed on the carrier generation layer; a gatecontact disposed between the source contact and the drain contact; and aconductive striped portion electrically coupled with the drain contact.a conductive transverse portion disposed between the conductive stripedportion and the gate contact, the conductive transverse portion beingaligned non-parallel to the conductive striped portion.
 20. Thesemiconductor device of claim 19, further comprising: a field platecoupled to the conductive transverse portion.